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Irhf7130

WebIRHF7130 Manufacturer: International Rectifier Description: TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-205AF Lifecycle: New from this manufacturer. Datasheet: IRHF7130 Datasheet Delivery: DHL FedEx Ups TNT EMS Payment: T/T Paypal Visa MoneyGram Western Union More Information: IRHF7130 more Information WebInfineon Technologies AG's IRHF7130 is trans mosfet n-ch 100v 8a 3-pin to-39 in the fet transistors, mosfets category. Check part details, parametric & specs updated 17 FEB …

IRHF7130 datasheet - Repetitive Avalanche And Dv/dt Rated …

WebIRHF7130; IRHF7130. Overview. Rad hard, 100V, 8A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features. Single Event Effect (SEE) … WebIRHF7130 - MOSFET from Infineon Technologies. Get product specifications, Download the Datasheet, Request a Quote and get pricing for IRHF7130 on everything PE bioenergy pollution and economic growth https://camocrafting.com

IRHF7130 IRF [International Rectifier], IRHF7130 Datasheet - Page 4

Web2n7261 g4 3 100v n-ch / 601 to-39 irhf7130 2n7380u g4 3 100v n-ch / 614 smd-0.5 irhnj7130 2n7380 g4 3 100v n-ch / 614 to-257 irhy7130cm 2n7262u g4 3 200v n-ch / 601 lcc-18 irhe7230 2n7262 g4 3 200v n-ch / 601 to-39 irhf7230 2n7381u g4 3 200v n-ch / 614 smd-0.5 irhnj7230 2n7381 g4 3 200v n-ch / 614 to-257 irhy7230cm WebIRHF7130 Repetitive Avalanche And Dv/dt Rated HexFET(r) Transistor: 100v, 8a . Part Number Radiation Level R DS(on) IRHF7130 100K Rads (Si) IRHF3130 300K Rads (Si) IRHF4130 600K Rads (Si) IRHF8130 1000K Rads (Si) ID 8.0A. International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications. WebBuy IRHF7130 IR , Learn more about IRHF7130 RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39), View the manufacturer, and stock, and datasheet pdf for the … bio energy patches

RADIATION HARDENED POWER MOSFET THRU-HOLE TO …

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Irhf7130

IRHF7130 - Infineon Technologies

Web6 of 13 2024-05-16 IRH7130 Radiation Hardened Power MOSFET Thru-Hole (TO-204AA) Device Characteristics 2.4.2 Single Event Effects — Safe Operating Area WebThe HEXFET® technology is the key to international Rectifiers advance line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. FEATURES: Repetitive Avalanche Rating Isolated and Hermetically Sealed Alternative to TO-3 Package Simple Drive Requirements

Irhf7130

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WebIRHF7130 Pre-Irradiation Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Source-Drain Diode Ratings and … WebRADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39), IRHF7130 Datasheet, IRHF7130 circuit, IRHF7130 data sheet : IRF, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.

WebPre-Irradiation IRHF7130, JANSR2N7261 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter 100K Rads(Si) 1 2 300 - 1000K Rads (Si) Units Test … WebRequest IRF [International Rectifier] IRHF7130: REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR online from Elcodis, view and download IRHF7130 pdf datasheet, …

WebIRHF7130 In-Stock. Request a quote for the part number# IRHF7130. Call 877-240-8595 to order. Same day shipping on in-stock parts. WebIRHF7130 (JANSR2N7261) PD-90653H Radiation Hardened Power MOSFET Thru-Hole TO-205AF (TO-39) 100V, 8.0A, N-channel, Rad Hard HEXFET» Technology Features x Single …

WebIRHF7130, JANSR2N7261 Pre-Irradiation Note: Corresponding Spice and Saber models are available on the International Rectifier Website. Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 8.0 ISM Pulse Source Current (Body Diode) — — 3.2

WebPart # IRHF7130: Description : Trans MOSFET N-CH 100V 8A 3-Pin TO-39 - Rail/Tube (Alt: IR: Category : TRANSISTOR: Availability : In Stock Qty dahmer cast grandmaWebIRHF7130; IRHF7130. Überblick. Rad hard, 100V, 8A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features. Single Event Effect (SEE) Hardened; Low RDS(on) Low total gate charge; Simple Drive Requirements; Hermetically Sealed; Ceramic package; bioenergy pros and conshttp://datasheet.elcodis.com/pdf2/98/97/989795/jansr2n7261.pdf bioenergy productsWebIRHF7130 综述 Rad hard, 100V, 8A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low … bioenergy roadmapWebIRHF7130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post ... bioenergy resourcesWebIRF713 Datasheet N-Channel Power MOSFETs, 2.25A, 350-400V - Fairchild Semiconductor N-Channel Power MOSFETs, ARTSCHIP ELECTRONICS CO.,LMITED. bioenergy practitionerWebIRHF7130 (JANSR2N7261) Radiation Hardened Power MOSFET Thru-Hole (TO-39) Absolute Maximum Ratings 1 Absolute Maximum Ratings Table 2 Absolute Maximum Ratings (Pre-Irradiation) 1 Repetitive Rating; Pulse width limited by maximum junction temperature. 2 V DD = 25V, starting TJ = 25°C, L = 4.1mH, Peak IL = 8.0A, VGS = 10V 3 I dahmer chrysler finance