Inc6006as1

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August undefined, 2024

WebUltra Super Mini. SC-59. SC-62 WebINC6006AS1. Type name Availability Status Package Packaging Quantity Minimum Packaging Quantity Packaging Type ROHS Spice parameter; INC6006AS1: Preview: TO …

Isahaya Electronics Corporation

WebINC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for eas y mounting. ・High voltage V. CEO = 160V ・Low voltage V. CE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 . APPLICATION . High voltage switching. WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Datasheet(PDF) - Isahaya Electronics Corporation - INC6006AS1 Datasheet, FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, Isahaya Electronics Corporation - 2SC5383_10 Datasheet, Isahaya Electronics Corporation - 2SC5814 Datasheet ont prefix

INA6006AS1 datasheet - Transistor. Isahaya Package : Micro ; …

WebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE (sat) = 0.2V (MAX) Complementary http://ec2-52-68-2-140.ap-northeast-1.compute.amazonaws.com/product/Search/Discreet/ja/111 WebINA6006AS1 Hoja de datos, INA6006AS1 datasheet, Isahaya Electronics - TRANSISTOR, Hoja Técnica, INA6006AS1 pdf, dataark, wiki, arduino, regulador, amplificador ... ios-xe netflow

INC6006AS1 - en.sekorm.com

INC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary ： INA6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO BUS Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics Corporation - … ios xcworkspaceWebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Peak collector current Collector current Collector dissipation(Ta=25) Junction temperature Storage temperature ont power plug

"WebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to … " - Inc6006as1

Inc6006as1

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WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO ETHERNET Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics … http://www.idc-com.cn/product/Search/Discreet/en/111/INC6006AS1

WebDownload INC6006AS1 Datasheet: Specifications. Isahaya Package: Micro: JEITA Package: JEDEC Package: TO-92S: AEC correspondence: Type: NPN: Collector to Emitter voltage?VCEO(V) 160: Collector current?IC(A) 0.1: Collector dissipation?PC(mW) 600: DC forward current gain hFE: 72 ? 330: Datasheet first page Image. Web製品・サービスに関するお問い合わせ大阪営業本部. 06-4709-7218

WebINA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Small capacitance Cob=2.8pF(TYP) ・Complementary ： INC6006AS1 APPLICATION Hi-Fi Audio, High voltage switching. OUTLINE DRAWING UNIT：mm MAXIMUM RATING（Ta=25℃） WebThe INA851 is the industry's first high-precision instrumentation amplifier with fully differential outputs. This device is optimized to drive inputs of modern high performance analog-to-digital converters (ADCs) with fully differential inputs. The INA851 operates over a very-wide, single-supply or dual-supply range. The

http://www.datasheet.es/PDF/984097/INA6006AS1-pdf.html

WebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 … ont port on routerhttp://www.idc-com.cn/product/Search/Discreet/en/111/INC6006AS1 ont power not onWebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ... ont prefereWebScribd ist die weltweit größte soziale Plattform zum Lesen und Veröffentlichen. ontplofte teslaWebINC6006AS1. Type name Availability Status Package Packaging Quantity Minimum Packaging Quantity Packaging Type ROHS Spice parameter; INC6006AS1: Preview: TO-92S: 2500: 2500: Taping: Yes: Structure of Item Code; Shipping form and package information; Mounting Method; Storage and handling instructions; ontpropertiesWebAMPLIFY Datasheet(PDF) - Guangdong Kexin Industrial Co.,Ltd - 2SA1364 Datasheet, Low Frequency Power Amplify Applications, Isahaya Electronics Corporation - RT1A3906-T112 Datasheet, List of Unclassifed Manufacturers - 2SB1314 Datasheet ont power consumptionWebDatasheet. Description. Isahaya Electronics Cor... INC6006AP1. 156Kb / 4P. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE. Search Partnumber … ios-xe password recovery